In this study, the cryogenic temperature performance of an EPC gallium-nitride (GaN) power field-effect transistor was evaluated. This test is used to characterize hard switching turn- on and turn-off. PD1500A Dynamic Power Device Analyzer/Double Pulse Tester Double pulse tests are carried out at different current and voltage levels. The EMC shop specializes in turnkey test systems for radiated testing. Free shipping on most orders over $60 (SGD) Incoterms:DDP All prices include duty and customs fees on select shipping methods. GSP65R25HB-EVB GaN E-HEMT Half Bridge Evaluation Module 650V/25mΩ GS66516B GSP65R13HB-EVB GaN E-HEMT Half Bridge Evaluation Module 650V/13mΩ 2 x GS66516B 1.2 IMS Evaluation Module - Technical Description Using this platform, power designers can evaluate the performance of GaN Systems' E-HEMT These techniques are utilized within an innovative measurement topology and layout. LEARN MORE. PDF Wide Bandgap - Double Pulse Test Analysis Here you will find device model information. Comparision of different drivers. Figure 2 The measurement setup includes the IsoVu system (left) and a DPT board with MMCX connectors (right). References Dynamic ON-Resistance Test Method Guidelines for GaN HEMT based Power Conversion Devices, Version 1.0, JEP173. Double Pulse Testing DPT is used to measure power devices' switching parameters and dynamic behavior. Experimental characterization of enhancement mode gallium-nitride power ... The EVB can be conveniently converted to double pulse testing board and it is designed to withstand a maximum bus voltage of 1000V. 2022-03-18 - Takamasa Arai, Ryo Takeda, Bernhard Holzinger, and Michael Zimmerman, and Mike Hawes, Keysight Dynamic On-Resistance Measurement Technique for GaN Power Transistors. PDF High Power IMS Evaluation Platform - Arrow The Double Pulse Switching Test is presented, along with an example of test results. PDF Application Brief GaN Switching Loss Simulation using LTSpice - GaN Systems • In this presentation, a half bridge double pulse test circuit in LTSpiceis introduced and used as the test bench to evaluate switching performance under different electrical parameters. Initial test results on a v-GaN PiN Double-pulse test data demonstrates that the Pre-Switch soft-switching platform, which integrates the company's Pre-Drive3 controller board with a Pre-Flex FPGA and RPG gate-driver board, can . The platform ensures user safety and protection of the system's measurement hardware. The power device can be a Si, SiC, or GaN MOSFET or IGBTs. PDF Packaging a Top-Cooled 650V/150A GaN Power Module with Insulated ...